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Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates - ScienceDirect
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Band diagram of an InAs∕InSb dot along the [001] direction through the... | Download Scientific Diagram
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence
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Structural, mechanical, and electronic properties of 25 kinds of <em>III</em>–<em>V</em> binary monolayers: A computational study with first-principles calculation
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Fittings of the bandgap energy data given for indium antimonide by Fang... | Download Scientific Diagram
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Color online) The calculated band structures of InAs, InSb, and InAs x... | Download Scientific Diagram
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Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition - ScienceDirect
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Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates - ScienceDirect
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Adjusting the crystal size of InSb nanowires for optical band gap energy modification - ScienceDirect
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Electric field and uniaxial strain tunable electronic properties of the InSb/InSe heterostructure - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D0CP02721A
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Impact ionization and intervalley electron scattering in InSb and InAs induced by a single terahertz pulse | Scientific Reports
Why do III-V semiconductors (e.g., GaAs, GaN and AlN) have a wider bandgap than group IV semiconductors (Ge, Si and SiC) of similar atomic numbers? - Quora
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The bulk InSb band structure near the Γ -point with (solid lines) and... | Download Scientific Diagram
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